I2.2 Enabling Data Center Efficiency with GaN:
Presenter: Dr. Stephanie Watts Butler, Texas Instruments
Abstract: As the cloud and IOT have exploded in usage, so has electricity consumption by data centers. Changes are occurring in powering data centers to mitigate this increasing demand. The changes range from electricity generation to the data center, transfer within the data center, and even to final Point-of-Load (POL) . Gallium Nitride (GaN) is enabling some of the changes occurring in power electronics associated with data centers. This presentation will begin with an examination of the possible disruptive changes in the way data centers are powered, and then link those changes to the ones being enabled by GaN. How GaN enables better performance, efficiency, and density will be explained. The talk will conclude with an overview of various training and educational resources available.
- Presenter Biography: Stephanie Watts Butler, Ph.D., P.E., is the Technology Innovation Architect in High Voltage Power at Texas Instruments (TI), driving new high voltage and isolation technology innovations from concept to revenue by leading partnerships with TI's technology organizations, manufacturing sites, universities, and product development teams. She has produced innovations in the areas of control, process and package development, R&D management, and new product development. The result is power semiconductors that enable TI's customers to make smaller, lighter, and more energy efficient products. Dr. Butler has authored more than 40 papers and 17 U.S. patents. She is the Chair of JEDEC's JC-70 Wide Bandgap Committee, Co-founder of GaNSPEC, and a Fellow of the AVS. SWE honored Dr. Butler with their 2016 Lifetime Achievement Award and Business Insider named Dr. Butler to their most powerful female engineers list of 2017. Dr. Butler also serves on the TxGCP Champion Board and UT Austin Department of Chemical Engineering Advisory Council.