Invited Industry Session Details I1.1

I1.1 SiC Power MOSFET Technology:

  • Presenter:​ Kevin Matocha, CTO - Monolith Semiconductor Inc.

  • Abstract: The properties of Silicon Carbide (SiC) along with the advances of bulk and epitaxial material growth, and special device processing techniques have enable the demonstration and commercialization of SiC Schottky diodes and MOSFETs.  This presentation describes how Monolith Semiconductor and Littelfuse are driving the next wave of development to improve the manufacturability, performance and reliability of SiC devices for next-generation power electronics applications.  

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2018 Austin Power Electronics Symposium

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Location:

10100 Burnet Rd
Advanced Computing Building (ACB), Building 205
J.J. Pickle Research Campus
Austin, Texas

Email:

spec@utexas.edu